Pressure Sensor Silicon Chips & Dies

 

		SE101 - absolute pressure sensor dies (silicon piezoresistive) Featured in small size, model SE101 sensor dies are designed for absolute pressure measurement, and manufactured in silicon-silicon structure through MEMS Technology. The pressure range of SE101 is from 0~1 barA, 0~2 barA, ..,, up to 0~35 barA.
		SE103 - pressure sensor dies (silicon piezoresistive) Model SE103 pressure sensor dies are made from high quality silicon wafer on glass through 4" MEMS process. The pressure ranges of SE103 are from 0~200 mbarG up to 0~1000 barA, in form of relative (gauge) pressure or absolute pressure.
		SE105 - multifunctional pressure sensor dies (silicon piezoresistive) Model SE105 is a multifunctional pressure sensor die on which there are two independent Wheatstone bridge circuits to measure the line pressure (static pressure) and the differential pressure of industrial process. The SE105 sensor dies are made from 4" high quality silicon wafer on glass by means of MEMS technology. The differential pressure ranges of SE105 is from 0~400 mbar up to 0~10 bar with line pressure up to 160 bar. BCM 160M differenial pressure module uses SE 105 as sensing element.
		SE 107 - single axis acceleration sensor dies (silicon capacitive) Based on differential capacitive working principle, model SE107 sensor die is designed for one axis acceleration measurement in range of SE107 is ± 2g. The SE107 sensor die is developed in silicon on glass structure and made from high quality silicon wafer through MEMS process. As a result of advantage of capacitive technology, model SE107 sensor die features low stress effect and low temperature influence during acceleration measurement. BCM 157M differenial pressure module uses SE 107 as sensing element.